The growth, fabrication, and device characterization of InP quantum-dot light-emitting diodes based on GaP are described and discussed. The diode structures are grown on gallium phosphide substrates using gas-source molecular-beam epitaxy and the active region of the diode consists of self-assembled InP quantum dots embedded in a GaP matrix. Red electroluminescence originating from direct band-gap emission from the InP quantum dots is observed at low temperatures.With increasing temperature, however, the emission line shifts to the longer wavelength. The emission light is measured to above room temperature.

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