High mobility, -type transparent thin-film transistors (TTFTs) with a zinc indium oxide (ZIO) channel layer are reported. Such devices are highly transparent with optical transmission in the visible portion of the electromagnetic spectrum. ZIO TTFTs annealed at 600 °C operate in depletion-mode with threshold voltages to and turn-on voltages less than the threshold voltage. These devices have excellent drain current saturation, peak incremental channel mobilities of –, drain current on-to-off ratios of , and inverse subthreshold slopes of . In contrast, ZIO TTFTs annealed at 300 °C typically operate in enhancement-mode with threshold voltages of and turn-on voltages less than the threshold voltage. These 300 °C devices exhibit excellent drain–current saturation, peak incremental channel mobilities of , drain current on-to-off ratios of , and inverse subthreshold slopes of . ZIO TTFTs with the channel layer deposited near room temperature are also demonstrated. X-ray diffraction analysis indicates the channel layers of ZIO TTFTs to be amorphous for annealing temperatures up to 500 °C and polycrystalline at 600 °C. Low temperature processed ZIO is an example of a class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with electronic configurations.
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15 March 2005
Research Article|
March 11 2005
Transparent thin-film transistors with zinc indium oxide channel layer
N. L. Dehuff;
N. L. Dehuff
School of Electrical Engineering and Computer Science, Oregon State University
, Corvallis, Oregon 97331-3211
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E. S. Kettenring;
E. S. Kettenring
School of Electrical Engineering and Computer Science, Oregon State University
, Corvallis, Oregon 97331-3211
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D. Hong;
D. Hong
School of Electrical Engineering and Computer Science, Oregon State University
, Corvallis, Oregon 97331-3211
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H. Q. Chiang;
H. Q. Chiang
a)
School of Electrical Engineering and Computer Science, Oregon State University
, Corvallis, Oregon 97331-3211
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J. F. Wager;
J. F. Wager
School of Electrical Engineering and Computer Science, Oregon State University
, Corvallis, Oregon 97331-3211
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R. L. Hoffman;
R. L. Hoffman
Hewlett-Packard Company
, 1000 NE Circle Boulevard, Corvallis, Oregon 97330-4239
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C.-H. Park;
C.-H. Park
Department of Chemistry, Oregon State University
, Corvallis, Oregon 97331-4003
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D. A. Keszler
D. A. Keszler
Department of Chemistry, Oregon State University
, Corvallis, Oregon 97331-4003
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Appl. Phys. 97, 064505 (2005)
Article history
Received:
September 10 2004
Accepted:
January 05 2005
Citation
N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C.-H. Park, D. A. Keszler; Transparent thin-film transistors with zinc indium oxide channel layer. J. Appl. Phys. 15 March 2005; 97 (6): 064505. https://doi.org/10.1063/1.1862767
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