High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two (100) -type Czochralski-grown Si wafers were preamorphized with either a 48- or a implant to , and subsequently implanted with molecular ions to . The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is to show that the UHT annealing technique is capable of producing a highly activated -type source∕drain extension without being subjected to TED only when the preamorphization implant is sufficiently deep.
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15 February 2005
Research Article|
January 21 2005
The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon
K. A. Gable;
K. A. Gable
a)
Department of Materials Science and Engineering, University of Florida
, Gainesville, Florida 32611
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L. S. Robertson;
L. S. Robertson
Silicon Technology Development
, Texas Instruments Inc., Dallas, Texas 75243
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Amitabh Jain;
Amitabh Jain
Silicon Technology Development
, Texas Instruments Inc., Dallas, Texas 75243
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K. S. Jones
K. S. Jones
Department of Materials Science and Engineering, University of Florida
, Gainesville, Florida 32611
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a)
Also at: Intel Corporation, AL3-62, 3585 SW 198th Ave., Aloha, OR 97007; electronic mail: [email protected]
J. Appl. Phys. 97, 044501 (2005)
Article history
Received:
January 09 2004
Accepted:
November 09 2004
Citation
K. A. Gable, L. S. Robertson, Amitabh Jain, K. S. Jones; The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon. J. Appl. Phys. 15 February 2005; 97 (4): 044501. https://doi.org/10.1063/1.1844619
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