In layers grown by metal-organic vapor phase epitaxy on sapphire substrates the temperature-dependent Hall (TDH) and photo-Hall-effect (PHE) measurements show essential differences between undoped and -doped . In undoped the maximum of the Hall mobility occurs at temperatures near with a low value. In PHE, an illumination introduces an enhancement of the mobility and a decrease of the electron density. In contrast, in -doped the maximum Hall mobility is higher by a factor of 10 and is observed at temperatures between 100 and . The photoinduced changes in the mobility and electron density are only marginal. Intensity dependent PHE measurements suggest the existence of internal potential barriers caused by inhomogeneities in the undoped samples. These results are combined with the surface-potential roughness on a microscale, as determined by scanning surface-potential microscopy (SSPM). In SSPM the undoped layers show strong potential fluctuations while they are lower for the -doped samples. A correlation among the rms roughness of the surface potential, the maximum Hall mobility in TDH, and the maximum changes of the photo-Hall mobility is observed. In undoped the mobility seems to be determined by the scattering at inner potential barriers stemming from structural inhomogeneities.
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15 February 2005
Research Article|
January 28 2005
Correlation between macroscopic transport parameters and microscopic electrical properties in
H. Witte;
H. Witte
a)
Institute of Experimental Physics, Otto-von-Guericke University of Magdeburg
, P.O. Box 4120, 39016 Magdeburg, Germany
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A. Krtschil;
A. Krtschil
Institute of Experimental Physics, Otto-von-Guericke University of Magdeburg
, P.O. Box 4120, 39016 Magdeburg, Germany
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E. Schrenk;
E. Schrenk
Institute of Experimental Physics, Otto-von-Guericke University of Magdeburg
, P.O. Box 4120, 39016 Magdeburg, Germany
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K. Fluegge;
K. Fluegge
Institute of Experimental Physics, Otto-von-Guericke University of Magdeburg
, P.O. Box 4120, 39016 Magdeburg, Germany
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A. Dadgar;
A. Dadgar
Institute of Experimental Physics, Otto-von-Guericke University of Magdeburg
, P.O. Box 4120, 39016 Magdeburg, Germany
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A. Krost
A. Krost
Institute of Experimental Physics, Otto-von-Guericke University of Magdeburg
, P.O. Box 4120, 39016 Magdeburg, Germany
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J. Appl. Phys. 97, 043710 (2005)
Article history
Received:
May 05 2004
Accepted:
December 02 2004
Citation
H. Witte, A. Krtschil, E. Schrenk, K. Fluegge, A. Dadgar, A. Krost; Correlation between macroscopic transport parameters and microscopic electrical properties in . J. Appl. Phys. 15 February 2005; 97 (4): 043710. https://doi.org/10.1063/1.1854212
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