A study of $InxGa1−xN$ growth by reflection high-energy electron diffraction Available to Purchase

Epitaxial growth of $InxGa1−xN$ alloys on $GaN(0001)$ by plasma-assisted molecular-beam epitaxy is investigated using the in situ reflection high-energy electron-diffraction (RHEED) technique. Based on RHEED pattern changes over time, the transition of growth mode from two-dimensional (2D) nucleation to three-dimensional islanding is studied for various indium compositions. RHEED specular-beam intensity oscillations are recorded during the 2D wetting-layer growth, and the dependences of the oscillation period/frequency on the substrate temperature and source flux are established. By measuring the spacing between diffraction spots in RHEED, we also estimated indium composition, $x$⁠, in alloys grown under different flux combinations. Incorporation coefficients of both gallium and indium are derived. Possible surface segregation of indium atoms is finally examined.