Vertical magnetoresistive random access memory (VMRAM) is a high-density, nonvolatile memory that employs current perpendicular to the plane to switch soft (read) and hard (write) magnetic layers of a giant-magnetoresistive memory element. VMRAM cells consist of closed-flux toroid-shaped elements and intersecting address lines situated above and beneath the elements [J.-G. Zhu, Y. Zheng, and G. A. Prinz, J. Appl. Phys. 87, 6668 (2000)]. Experiments performed on 64-element strings show that the intersecting address lines effectively assist in VMRAM cell switching. With projected density scaling to [J.-G. Zhu, Y. Zheng, and G. A. Prinz, J. Appl. Phys. 87, 6668 (2000)], VMRAM has the potential to compete with both semiconductor memories and mechanical hard disks.
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15 May 2005
49th Annual Conference on Magnetism and Magnetic Materials
7-11 November 2004
Jacksonville, Florida (USA)
Research Article|
Magnetism and Magnetic Materials|
May 17 2005
Address line-assisted switching of vertical magnetoresistive random access memory cells
John M. Anderson;
John M. Anderson
a)
Advanced Technology, NVE Corporation
, 11409 Valley View Road, Eden Prairie, Minnesota 55344
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David J. Brownell;
David J. Brownell
b)
Advanced Technology, NVE Corporation
, 11409 Valley View Road, Eden Prairie, Minnesota 55344
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Gary A. Prinz;
Gary A. Prinz
c)
Naval Research Laboratory
, Code 6300.1, 4555 Overlook Avenue SW, Washington, DC 20375
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Harold Huggins;
Harold Huggins
d)
Naval Research Laboratory
, Code 6300.1, 4555 Overlook Avenue SW, Washington, DC 20375
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Luan V. Van;
Luan V. Van
e)
Naval Research Laboratory
, Code 6300.1, 4555 Overlook Avenue SW, Washington, DC 20375
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Joseph A. Christodoulides;
Joseph A. Christodoulides
f)
Naval Research Laboratory
, Code 6300.1, 4555 Overlook Avenue SW, Washington, DC 20375
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Jian-Gang Zhug
Jian-Gang Zhug
g)
Department of Electrical and Computer Engineering, Carnegie-Mellon University
, 5000 Forbes Avenue, Pittsburgh, Pennsylvania 15213
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a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
c)
Electronic mail: [email protected]
d)
Electronic mail: [email protected]
e)
Electronic mail: [email protected]
f)
Electronic mail: [email protected]
g)
Electronic mail: [email protected]
J. Appl. Phys. 97, 10P504 (2005)
Citation
John M. Anderson, David J. Brownell, Gary A. Prinz, Harold Huggins, Luan V. Van, Joseph A. Christodoulides, Jian-Gang Zhug; Address line-assisted switching of vertical magnetoresistive random access memory cells. J. Appl. Phys. 15 May 2005; 97 (10): 10P504. https://doi.org/10.1063/1.1854272
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