The surface morphology of Ge films during -source molecular beam epitaxy on a Ge(100) substrate is dramatically changed through irradiation with synchrotron radiation . At temperatures below 300 °C, a two-dimensionally flat film continues to grow with the surface tightly passivated by a hydride layer. At temperatures above 350 °C, dangling bonds are partially terminated with hydrogen atoms while Ge adatoms are highly mobile, resulting in a nonuniform nucleation that creates the islands. Small islands merge into a few-hundred-nanometer-tall islands surrounded by the (113)-face sidewalls. This kinetic roughening continues until the nucleation on the (001) plane ceases due to the buildup of the layer. Once the surface free energy is minimized by the hydrogen termination, flattening of the islands proceeds to reduce the chemical potential of the system. The valleys between the islands are preferentially filled, and the film is eventually converted into a smooth epilayer with no memory of the initial roughening.
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15 May 2005
Rapid Communication|
May 09 2005
Morphological switching in synchrotron-radiation-excited Ge homoepitaxy: Transition from kinetic roughening to smoothing Available to Purchase
Housei Akazawa
Housei Akazawa
a)
Nippon Telegraph and Telephone Corporation (NTTC)
Microsystem Integration Laboratories
3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Housei Akazawa
a)
Nippon Telegraph and Telephone Corporation (NTTC)
Microsystem Integration Laboratories
3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japana)
Electronic mail: [email protected]
J. Appl. Phys. 97, 106105 (2005)
Article history
Received:
November 22 2004
Accepted:
March 10 2005
Citation
Housei Akazawa; Morphological switching in synchrotron-radiation-excited Ge homoepitaxy: Transition from kinetic roughening to smoothing. J. Appl. Phys. 15 May 2005; 97 (10): 106105. https://doi.org/10.1063/1.1900295
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