The interface was investigated by transmission electron microscopy for films grown on (001) Si by molecular-beam epitaxy with different native oxide removal treatments, and flux ratios. The interface and film microstructure were independent of the process used to remove the native oxide, but the interface reactivity was dependent on the flux ratio. A low flux ratio resulted not only in a layer of amorphous material at the film∕substrate interface but also in the formation of crystalline precipitates at that interface. These results are consistent with thermodynamic expectations in which it is paramount to maintain separation between and the underlying silicon.
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