The thickness evolution of the microstructure of epitaxial thin films grown on was investigated by means of transmission electron microscopy. Within the layer, a layered structure (three sublayers) is distinguished as for the configuration of lattice strain and defects. The first sublayer extends for from the lattice-coherent interface. The second -thick sublayer forms a semicoherent interface with the first sublayer due to the creation of a misfit dislocation network. The third sublayer extends beyond the second sublayer exhibiting a structure characterized by compact columnar features. Planar defects are formed at the boundaries between such features. The formation of a layered structure within the films is discussed in the light of the growth modes of films on lattice-mismatched substrates.
Skip Nav Destination
,
,
,
,
Article navigation
15 May 2005
Research Article|
May 03 2005
Microstructure of epitaxial bilayer films on substrates
J. Q. He;
J. Q. He
a)
Institut für Festkörperforschung
, Forschungzentrum Jülich GmbH, D-52425 Jülich, Germany
Search for other works by this author on:
E. Vasco;
E. Vasco
b)
Institut für Festkörperforschung
, Forschungzentrum Jülich GmbH, D-52425 Jülich, Germany
Search for other works by this author on:
C. L. Jia;
C. L. Jia
Institut für Festkörperforschung
, Forschungzentrum Jülich GmbH, D-52425 Jülich, Germany
Search for other works by this author on:
R. Dittmann;
R. Dittmann
Institut für Festkörperforschung
, Forschungzentrum Jülich GmbH, D-52425 Jülich, Germany
Search for other works by this author on:
R. H. Wang
R. H. Wang
Department of Physics and Center for Electron Microscopy,
Wuhan University
, Wuhan 430072, People’s Republic of China
Search for other works by this author on:
J. Q. He
a)
E. Vasco
b)
C. L. Jia
R. Dittmann
R. H. Wang
Institut für Festkörperforschung
, Forschungzentrum Jülich GmbH, D-52425 Jülich, Germanya)
Author to whom correspondence should be addressed; present address: Department of Biology, Brookhaven National Laboratory, 50 Bell Ave. Upton, NY 11973; electronic mail: [email protected]
b)
Present address: Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Cantoblanco, Madrid, Spain.
J. Appl. Phys. 97, 104907 (2005)
Article history
Received:
November 23 2004
Accepted:
March 01 2005
Citation
J. Q. He, E. Vasco, C. L. Jia, R. Dittmann, R. H. Wang; Microstructure of epitaxial bilayer films on substrates. J. Appl. Phys. 15 May 2005; 97 (10): 104907. https://doi.org/10.1063/1.1897067
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Related Content
Electrical properties and microstructures of Pt/Ba 0.5 Sr 0.5 TiO 3 / SrRuO 3 capacitors
Appl. Phys. Lett. (March 1997)
Microstructure and ferroelectric properties of epitaxial cation ordered PbSc0.5Ta0.5O3 thin films grown on electroded and buffered Si(100)
J. Appl. Phys. (August 2013)
Amplitude dependence of internal friction and elastic modulus at ultrasonic frequencies in the Ni-Mn-Ga martensitic phase
AIP Conf. Proc. (November 2021)
Effect of microstructure on irradiated ferroelectric thin films
J. Appl. Phys. (June 2017)
Deformation microstructure and positive temperature dependence of flow stress in Ni3Ge
AIP Conf. Proc. (January 2016)