Structural and electrical properties of Ge nanocrystals embedded in $SiO2$ by ion implantation and annealing Available to Purchase

Silicon dioxide $(SiO2)$ on Si layers with embedded germanium nanocrystals (Ge-ncs) were fabricated using $Ge+$ implantation and subsequent annealing. Transmission electron microscopy and Rutherford backscattering spectrometry have been used to study the Ge redistribution in the $SiO2$ films as a function of annealing temperature. A monolayer of Ge-ncs near the $Si∕SiO2$ interface was formed under specific annealing conditions. This layer, with a nc density and mean size measured to be, respectively, $1.1×1012∕cm2$ and $5nm$⁠, is located at approximately $4nm$ from the $Si∕SiO2$ interface. Capacitance–voltage measurements were performed on metal-oxide-semiconductor structures containing such implanted $SiO2$ layers in order to study their electrical properties. The results indicate a strong memory effect at relatively low programming voltages $(<5V)$ due to the presence of Ge-ncs near the $Si∕SiO2$ interface.