Motivated by recent experimental work on quantum dots subjected to voltage pulses we consider a simple model to study the transition between off-resonance and on-resonance scattering states with the same incident energy in response to a sudden change in the well depth of a double barrier potential structure. The change displaces the real part of the resonance energy to coincide with the incident energy. The resonance buildup is not given by a pure exponential growth due to the interference between incident and resonance components represented by nearby poles, but the resonance lifetime is a relevant time scale. The reverse process (resonance depletion) that follows the opposite change in the well depth detunes the resonance level and the incident energy but, except for short and long time deviations, the decay is exponential with the lifetime of the displaced resonance. For a larger change in the well depth beyond a critical depth, trapping dominates rather than decay since the resonance becomes a bound state.
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1 January 2005
Research Article|
December 13 2004
Resonant tunneling transients and decay for a one-dimensional double barrier potential Available to Purchase
F. Delgado;
F. Delgado
Departamento de Química-Física, UPV-EHU
, Apartado 644, 48080 Bilbao, Spain
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J. G. Muga;
J. G. Muga
Departamento de Química-Física, UPV-EHU
, Apartado 644, 48080 Bilbao, Spain
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D. G. Austing;
D. G. Austing
Institute for Microstructural Sciences M23A, National Research Council
, Montreal Road, Ottawa, Ontario K1A 0R6, Canada
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G. García-Calderón
G. García-Calderón
Institito de Física, Universidad Nacional Autónoma de México
, Apartado Postal 20-364, 01000 México, Distrito Federal, México
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F. Delgado
Departamento de Química-Física, UPV-EHU
, Apartado 644, 48080 Bilbao, Spain
J. G. Muga
Departamento de Química-Física, UPV-EHU
, Apartado 644, 48080 Bilbao, Spain
D. G. Austing
Institute for Microstructural Sciences M23A, National Research Council
, Montreal Road, Ottawa, Ontario K1A 0R6, Canada
G. García-Calderón
Institito de Física, Universidad Nacional Autónoma de México
, Apartado Postal 20-364, 01000 México, Distrito Federal, MéxicoJ. Appl. Phys. 97, 013705 (2005)
Article history
Received:
September 15 2004
Accepted:
October 07 2004
Connected Content
A correction has been published:
Erratum: “Resonant tunneling transients and decay for a one-dimensional double barrier structure” [J. Appl. Phys. 97, 013705 (2005)]
Citation
F. Delgado, J. G. Muga, D. G. Austing, G. García-Calderón; Resonant tunneling transients and decay for a one-dimensional double barrier potential. J. Appl. Phys. 1 January 2005; 97 (1): 013705. https://doi.org/10.1063/1.1826215
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