Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Growth of high quality diamond for surface conductive device applications is demonstrated. Mobility values higher than $140cm2V−1s−1$ at sheet carrier concentrations of $2.5×1012cm−2$ were achieved using a high growth rate process. Furthermore, control over the carrier transport statistics is demonstrated on both single crystal and polycrystalline diamond. This process allows the production of high quality electronic grade diamond with ability to tune carrier transport statistics. The mechanism behind this process is discussed.