We have studied the electronic properties, in relation to structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between and activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrates of different types ( type and type) and different doping concentrations, from low-doped to highly doped . We show that the monolayers on -, -, and -silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as and high-quality capacitance-voltage characteristics. The monolayers formed on -type silicon are more disordered and therefore exhibit larger leakage current densities when embedded in a silicon∕monolayer∕metal junction. The inferior structural and electronic properties obtained with -type silicon pinpoint the important role of surface potential and of the position of the surface Fermi level during the chemisorption of the organic monolayers.
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Research Article| July 26 2004
1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping
Corinne Miramond, Dominique Vuillaume; 1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping. J. Appl. Phys. 1 August 2004; 96 (3): 1529–1536. https://doi.org/10.1063/1.1767984
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