Neutron-transmutation-doped GaAs samples were prepared by irradiating the middle-level neutrons into the semi-insulating GaAs grown by a liquid encapsulated Czochralski method and subsequently implanted with Mn+. The characteristics of the Mn+-implanted neutron-transmutation-doped GaAs (namely, the implantation of Mn+ subsequent to neutron-transmutation-doping) were investigated by various measurements. The result of the energy dispersive x-ray peak displayed an injected Mn concentration of 9.65%. The photoluminescence peaks related to carbon and germanium acceptors were resolved, and the peaks related to Mn due to a neutral Mn acceptor were evidently observed. It is found that the proper activation for the neutral Mn acceptor starts from a relatively low annealing temperature of 600°C for 15min. The atomic force microscopy and magnetic forcemicroscopy images showed that magnetic clusters were well formed. The ferromagnetic hysteresis loop measured at 10K was observed, and the temperature-dependent magnetization revealed that the two different phases exist at 135 and 360K. The Curie temperature (Tc360K) is caused by MnAs, which agrees with the clusters of the magnetic force microscopy image.

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