Analytical band Monte Carlo simulation of electron impact ionization in $In0.53Ga0.47As$

An analytical band Monte Carlo model has been developed to study electron transport and impact ionization in $In0.53Ga0.47As$⁠. Our simulations show that it is important to include the second conduction band at $X7$ because impact ionization becomes significant in this higher band at fields above $100kV∕cm$⁠. The higher ionization rate here is found to be responsible for the strong field dependence of the ionization coefficient for electric fields above $180kV∕cm$⁠. At lower fields the weak field dependence results from the large energy separation between the $Γ6$ and $X7$ valleys which confines most of the electrons to the first conduction band, where the ionization rate is lower. Although the electron impact ionization coefficient of $InGaAs$ is comparable to that of $GaAs$ at $300kV∕cm$⁠, the average electron energy at impact ionization is $1.59eV$ lower than in $GaAs$ and the average time to impact ionization is almost twice that in $GaAs$⁠, indicating a slower drift of electrons in $InGaAs$ prior to impact ionization