We investigate transport in nanotransistors in the Landauer–Büttiker formalism. A systematic linearization of the general expression for the current response yields the quantum version of the small signal equivalent circuit. This equivalent circuit can be compared with classical schemes so that explicit quantum mechanical expressions for the circuit elements can be extracted. Reducing our analysis to an effective Y-parameter description of the equivalent circuit we find the multi-terminal Büttiker formula except for one extra term. We show that this extra term is essential for the operation of transistors. An application of our theory to a simple transistor model yields a description of mismatch oscillations in the source-drain current experimentally observed in nano-transistors.
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1 July 2004
Research Article|
July 01 2004
Nano-transistors in the Landauer–Büttiker formalism
G. A. Nemnes;
G. A. Nemnes
Technische Universität Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
University of Bucharest, Faculty of Physics, PO Box MG-11, 76900 Bucharest Magurele, Romania
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U. Wulf;
U. Wulf
Technische Universität Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
IHP/BTU Joint Lab, Postfach 101344, 03013 Cottbus, Germany
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P. N. Racec
P. N. Racec
Technische Universität Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
National Institute of Materials Physics, PO Box MG-7, 76900 Bucharest Magurele, Romania
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J. Appl. Phys. 96, 596–604 (2004)
Article history
Received:
December 10 2003
Accepted:
March 24 2004
Citation
G. A. Nemnes, U. Wulf, P. N. Racec; Nano-transistors in the Landauer–Büttiker formalism. J. Appl. Phys. 1 July 2004; 96 (1): 596–604. https://doi.org/10.1063/1.1748858
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