In situ second-harmonic generation measurements of the stability of Si(111)–H and kinetics of oxide regrowth in ambient

The oxidation of H terminated silicon surfaces is a significant and controversial problem in silicon device fabrication. Second-harmonic generation rotational anisotropy (SHG–RA) provides a convenient means to monitor the chemical state of the Si surfaces, and to follow the conversion of H terminated surface to $SiO2$ by oxidation as a function of time in ambient. The change in SHG–RA of Si(111)–H was shown to correlate well with the ellipsometric thickness. SHG is sensitive to the initial stage of oxidation (induction period) as well as to the logarithmic oxide growth. SHG is sensitive to the electronic properties of the surface, therefore it is a sensitive probe of the quality of H terminated Si(111) surface. Under ambient conditions, (20% relative humidity, 23 °C) the initial oxidation rate is at most $2×10−6 ML/s.$