The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light-emitting diodes (LEDs) were investigated. The LLO-GaN LEDs were fabricated by lifting off the GaN LED wafer structure grown on the original sapphire substrate by a KrF excimer laser at 248 nm wavelength with the laser fluence of 0.6 J/cm2 and transferring it onto a Cu substrate. The LLO-GaN LEDs on Cu show a nearly four-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current up to 400 mA for the LLO-LEDs on Cu was also demonstrated. Based on the emission wavelength shift with the operating current data, the LLO-LEDs on Cu show an estimated improvement of heat dissipation capacities by nearly four times over the light-emitting devices on sapphire substrate. The LLO process should be applicable to other GaN-based LEDs in particular for those high light output power and high operation current devices.

1.
M. K.
Kelly
,
O.
Ambacher
,
B.
Dahlheimer
,
G.
Groos
,
R.
Dimitrov
,
H.
Angerer
, and
M.
Stutzmann
,
Appl. Phys. Lett.
69
,
1749
(
1996
).
2.
W. S.
Wong
,
T.
Sands
,
N. W.
Cheung
,
M.
Kneissl
,
D. P.
Bour
,
P.
Mei
,
L. T.
Romano
, and
N. M.
Johnson
,
Appl. Phys. Lett.
75
,
1360
(
1999
).
3.
W. S.
Wong
,
T.
Sands
,
N. W.
Cheung
,
M.
Kneissl
,
D. P.
Bour
,
P.
Mei
,
L. T.
Romano
, and
N. M.
Johnson
,
Appl. Phys. Lett.
77
,
2822
(
2000
).
4.
M.
Kneissl
,
W. S.
Wong
,
D. W.
Treat
,
M.
Teepe
,
N.
Miyashita
, and
N. M.
Johnson
,
Phys. Status Solidi A
188
,
23
(
2001
).
5.
C. F.
Chu
,
C. C.
Yu
,
H. C.
Cheng
,
C. F.
Lin
, and
S. C.
Wang
,
Jpn. J. Appl. Phys., Part 2
42
,
L417
(
2003
).
6.
F. Battaglia and T. F. George, Fundamentals in Chemical Physics (Kluwer, Boston, 1998).
7.
L. Migliore, Laser Materials Processing (Markcel Dekker, New York, 1996).
8.
J. F.
Muth
,
J. H.
Lee
,
I. K.
Shmagin
,
R. M.
Kolbas
,
H. C.
Casey
, Jr.
,
B. P.
Keller
,
U. K.
Mishra
, and
S. P.
DenBaars
,
Appl. Phys. Lett.
71
,
2572
(
1997
).
9.
H.
Chen
,
R. D.
Vispute
,
V.
Talyansky
,
R.
Enck
,
S. B.
Ogale
,
T.
Dahmas
,
S.
Choopun
,
R. P.
Sharma
,
T.
Venkatesan
,
A. A.
Iliadis
,
L. G.
Salamanca-Riba
, and
K. A.
Jones
,
Mater. Res. Soc. Symp. Proc.
482
,
1015
(
1998
).
10.
M. Von Allmen and A. Blastter, Laser-Beam Interactions with Materials, Physical Principles and Applications, 2nd ed. (Springer, Berlin, 1995).
11.
R.
Groh
,
G.
Gerey
,
L.
Bartha
, and
J. I.
Pankove
,
Phys. Status Solidi A
26
,
353
(
1974
).
12.
C. J.
Sun
,
P.
Kung
,
A.
Saxler
,
H.
Ohsato
,
E.
Bigan
, and
M.
Razeghi
,
J. Appl. Phys.
76
,
236
(
1994
).
13.
M. E.
Lin
,
B. N.
Sverdlov
, and
H.
Morkoç
,
Appl. Phys. Lett.
63
,
3625
(
1993
).
14.
Thermochemical Properties of Inorganic Substances, edited by O. Knacke, O. Kubaschewski, and K. Hesselmann (Springer, Berlin, 1991).
15.
K.
Osamua
,
K.
Nakajima
, and
Y.
Murakami
,
Solid State Commun.
11
,
617
(
1972
).
16.
G. A.
Slack
,
J. Phys. Chem. Solids
38
,
330
(
1977
).
17.
F.
Benabid
,
M.
Notcutt
,
V.
Loriette
,
L.
Ju
, and
D. G.
Blair
,
J. Phys. D
33
,
589
(
2000
).
18.
W. S.
Wong
,
T.
Sands
, and
N. W.
Cheung
,
Appl. Phys. Lett.
72
,
599
(
1998
).
19.
N. A. Lange, Handbook of Chemistry (Handbook Publishers, Sandusky, Ohio, 1956).
20.
C. F.
Chu
,
C. C.
Yu
,
Y. K.
Wang
,
J. Y.
Tsai
,
F. I.
Lai
, and
S. C.
Wang
,
Appl. Phys. Lett.
77
,
3423
(
2000
).
21.
S. R.
Jeon
,
Y. H.
Song
,
H. J.
Jang
, and
G. M.
Yang
,
Appl. Phys. Lett.
78
,
3265
(
2000
).
22.
J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1975).
23.
P. B.
Johnson
and
R. W.
Christy
,
Phys. Rev. B
9
,
5056
(
1974
).
24.
Palik, Handbook of Optical Constants of Solids III, edited by E. Palik (Academic, New York, 1998).
25.
H. Morkoc, Nitride Semiconductors and Devices (Springer, Berlin, 1999).
This content is only available via PDF.
You do not currently have access to this content.