We model the change of threshold current of a semiconductor laser diode as a function of time under the influence of defect annealing. Our approach describes an analytical multi-component model (MCM) based on a logistic equation which accounts for finite resources of fuel for the growth of nonradiative recombination defect complexes. We attribute the observable effect of the annealing on the threshold current to a reduction of the internal loss in the laser, as opposed to a reduction in the number of nonradiative recombination centers. In this study, we use the extended MCM to examine the intricate state when degradation and annealing co-exist in a semiconductor laser.
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