ZnS:Mn was produced in nanocrystalline form by a chemical method using polyvinylpyroledone as a chemical capping agent. Mn was stoichiometrically substituted for Zn in ZnS. The manganese (Mn) concentration was varied over its whole solid solution limit in ZnS, i.e., from 0 to 40%. In the high concentration regime this material formed may be thus written as nanocrystalline (Zn, Mn)S. The material formed is thus a wide gap diluted magnetic semiconductor. The characterized material was in powder form. X-ray diffraction was used to estimate the crystallite size and to confirm formation of the material in single phase. The average crystallite size obtained was about 2 nm. The material remained cubic over the whole Mn solid solution range. The room temperature photoluminescence (PL) when deconvoluted using a Gaussian fit showed two extra peaks in nanocrystalline ZnS:Mn when compared to pure nanocrystalline ZnS, which had only two peaks. Mn incorporation significantly enhanced the PL intensity in nanocrystalline ZnS:Mn (400–850 nm range) thereby suggesting induced PL. The red shift of the two new peaks with increase in concentration can be attributed to the change in band structure due to the formation of ZnS:Mn alloy. These extra peaks were due to (a) various transitions in the ZnS host, (b) related to S as the nearest neighbor of ion in the nanocrystallite (due to the high concentration of or (c) Mn–Mn interactions at high Mn concentrations. However, our prepared pure MnS samples did not show any photoluminescence at room temperature. So it is concluded that the observed PL is induced in the nanocrystalline ZnS host.
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15 January 2004
Research Article|
January 15 2004
Structure and photoluminescence studies on ZnS:Mn nanoparticles Available to Purchase
N. Karar;
N. Karar
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, 110016 India
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F. Singh;
F. Singh
Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi, 110067 India
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B. R. Mehta
B. R. Mehta
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, 110016 India
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N. Karar
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, 110016 India
F. Singh
Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi, 110067 India
B. R. Mehta
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, 110016 India
J. Appl. Phys. 95, 656–660 (2004)
Article history
Received:
April 15 2003
Accepted:
October 21 2003
Citation
N. Karar, F. Singh, B. R. Mehta; Structure and photoluminescence studies on ZnS:Mn nanoparticles. J. Appl. Phys. 15 January 2004; 95 (2): 656–660. https://doi.org/10.1063/1.1633347
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