Thermally stable Schottky contacts on n-type 4H–SiC with high Schottky barrier height were demonstrated by annealing the rare earth metal contacts (Ir and Ru) under ambient. The formation of rare earth metal oxides and after annealing led to the increase of Schottky barrier height (>1.9 eV) and a low reverse leakage current Synchrotron radiation photoemission spectroscopy showed that the work function of is higher about 0.23 eV than that of Ir and the binding energies of Si and C shifted toward lower binding energies by 0.12 eV in both and annealed samples. The oxidation annealing caused predominant Si outdiffusion to the leaving Si vacancies behind, leading to the shift of surface Fermi level to the energy level of Si vacancy. Both the formation of oxide and the Fermi level movement played a role in forming the Schottky contact with high barrier height and excellent thermally stability.
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1 November 2003
Research Article|
November 01 2003
Characteristics of Schottky contacts on n-type 4H–SiC using and Available to Purchase
Sang Youn Han;
Sang Youn Han
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea
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Jong-Lam Lee
Jong-Lam Lee
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea
Search for other works by this author on:
Sang Youn Han
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea
Jong-Lam Lee
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea
J. Appl. Phys. 94, 6159–6166 (2003)
Article history
Received:
May 13 2003
Accepted:
August 11 2003
Citation
Sang Youn Han, Jong-Lam Lee; Characteristics of Schottky contacts on n-type 4H–SiC using and . J. Appl. Phys. 1 November 2003; 94 (9): 6159–6166. https://doi.org/10.1063/1.1615701
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