We examined the interface formed by pentacene deposition onto a substrate. We found that upon pentacene deposition onto the pentacene vacuum level aligns with that of We observe the immediate appearance of a measurable pentacene highest occupied molecular orbital upon deposition of as little as 2 Å of pentacene onto the surface. This suggests that there are no chemical bonds at these interfaces. Measurements that examine the behavior of pentacene deposited onto show ordered growth of pentacene with no sign of chemical interaction or charge transfer.
REFERENCES
1.
A.
Tsumura
, H.
Koezuka
, and T.
Ando
, Appl. Phys. Lett.
49
, 1210
(1986
).2.
3.
4.
Y. Y.
Lin
, D. J.
Gundlach
, S. F.
Nelson
, and T. N.
Jackson
, IEEE Trans. Electron Devices
44
, 1325
(1997
).5.
T. N.
Jackson
, Y. Y.
Lin
, D. J.
Gundlach
, and H.
Klauk
, IEEE J. Sel. Top. Quantum Electron.
4
, 100
(1998
).6.
D. J.
Gundlach
, Y. Y.
Lin
, T. N.
Jackson
, S. F.
Nelson
, and D. G.
Schlom
, IEEE Electron Device Lett.
18
, 87
(1997
).7.
Y. Y.
Lin
, D. J.
Gundlach
, S. F.
Nelson
, and T. N.
Jackson
, IEEE Electron Device Lett.
18
, 606
(1997
).8.
C. D.
Dimitrakopoulos
, S.
Purushothaman
, J.
Kymissis
, A.
Callegari
, and J. M.
Shaw
, Science
283
, 822
(1999
).9.
10.
Z. B.
Deng
, X. M.
Ding
, L. S.
Liao
, X. Y.
Hou
, and S. T.
Lee
, Displays
21
, 79
(2000
).11.
V.
Bliznyuk
, B.
Ruhstaller
, P. J.
Brock
, U.
Scherf
, and S. A.
Carter
, Adv. Mater. (Weinheim, Ger.)
11
, 1257
(1999
).12.
Z. B.
Deng
, X. M.
Ding
, S. T.
Lee
, and W. A.
Gambling
, Appl. Phys. Lett.
74
, 2227
(1999
).13.
14.
H. E.
Katz
, A. J.
Lovinger
, and J. G.
Laquindanum
, Chem. Mater.
10
, 457
(1998
).15.
J. G.
Laquindanum
, H. E.
Katz
, A. J.
Lovinger
, and A.
Dodabalapur
, Chem. Mater.
8
, 2542
(1996
).16.
S. F.
Nelson
, Y.-Y.
Lin
, D. J.
Gundlach
, and T. N.
Jackson
, Appl. Phys. Lett.
72
, 1854
(1998
).17.
D.
Toet
, M. O.
Thompson
, P. M.
Smith
, P. G.
Carey
, and T. W.
Sigmon
, Jpn. J. Appl. Phys., Part 2
38
, L1149
(1999
).18.
C. D.
Dimitrakopoulos
, I.
Kymissis
, S.
Purushothaman
, D. A.
Neumayer
, P. R.
Duncombe
, and R. B.
Laibowitz
, Adv. Mater. (Weinheim, Ger.)
11
, 1372
(1999
).19.
20.
F.-J.
Meyer zu Heringdorf
, M. C.
Reuter
, and R. M.
Tromp
, Nature (London)
412
, 517
(2001
).21.
V.
Papaefthimiou
, A.
Siokou
, and S.
Kennou
, J. Appl. Phys.
91
, 4213
(2002
).22.
Y.
Gao
, H.
Mekaru
, T.
Miyamae
, and T.
Urisu
, J. Vac. Sci. Technol. A
18
, 1153
(2000
).23.
Li
Yan
, N. J.
Watkins
, S.
Zorba
, Yongli
Gao
, and C. W.
Tang
, Appl. Phys. Lett.
81
, 2752
(2002
).24.
N. J.
Watkins
, Li
Yan
, and Yongli
Gao
, Appl. Phys. Lett.
80
, 4384
(2002
).25.
K.
Takahashi
, M. B.
Seman
, K.
Hirose
, and T.
Hattori
, Appl. Surf. Sci.
190
, 56
(2002
).26.
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 852.
27.
E. A. Silinsh and V. Čápek, Organic Molecular Crystals: Interaction, Localization, and Transport Phenomena (American Institute of Physics, New York, 1994), p. 121.
This content is only available via PDF.
© 2003 American Institute of Physics.
2003
American Institute of Physics
You do not currently have access to this content.