The impact of rapid thermal annealing on the optical emission of GaInNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with high In and N content is shown to be highly dependent on the crystal structure of the QWs, as determined by transmission electron microscopy. Due to the presence of higher concentrations of nonradiative recombination centers, the annealing temperature required to obtain maximum photoluminescence emission is higher for the QW with strong structural modulation of the upper interface [at the onset of three-dimensional (3D) growth], intermediate for the two-dimensional (2D) grown QW with compositional fluctuations, and lower for the homogeneous 2D grown QW. Moreover, the transition from homogeneous 2D growth, to 2D growth with compositional fluctuations, and finally 3D growth, leads to progressively deeper carrier localization states below the conduction-band edge. Increasing annealing temperatures gradually shifts the localization states closer to the conduction-band edge, predominantly when compositional fluctuations are present. These results suggest a link between the formation of carrier localization centers and the presence of alloy fluctuations along the QW.
Skip Nav Destination
Article navigation
15 August 2003
Research Article|
July 29 2003
Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
A. Hierro;
A. Hierro
ISOM–Universidad Politécnica de Madrid, Ciudad Universitaria s/n, E-28040 Madrid, Spain
Search for other works by this author on:
J.-M. Ulloa;
J.-M. Ulloa
ISOM–Universidad Politécnica de Madrid, Ciudad Universitaria s/n, E-28040 Madrid, Spain
Search for other works by this author on:
J.-M. Chauveau;
J.-M. Chauveau
Paul-Drude-Institut für Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Search for other works by this author on:
A. Trampert;
A. Trampert
Paul-Drude-Institut für Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Search for other works by this author on:
M.-A. Pinault;
M.-A. Pinault
CRHEA-Centre National de la Recherche Scientifique, Parc Sophia Antipolis, F-06560 Valbonne, France
Search for other works by this author on:
E. Tournié;
E. Tournié
CRHEA-Centre National de la Recherche Scientifique, Parc Sophia Antipolis, F-06560 Valbonne, France
Search for other works by this author on:
A. Guzmán;
A. Guzmán
ISOM–Universidad Politécnica de Madrid, Ciudad Universitaria s/n, E-28040 Madrid, Spain
Search for other works by this author on:
J. L. Sánchez-Rojas;
J. L. Sánchez-Rojas
ISOM–Universidad Politécnica de Madrid, Ciudad Universitaria s/n, E-28040 Madrid, Spain
Search for other works by this author on:
E. Calleja
E. Calleja
ISOM–Universidad Politécnica de Madrid, Ciudad Universitaria s/n, E-28040 Madrid, Spain
Search for other works by this author on:
J. Appl. Phys. 94, 2319–2324 (2003)
Article history
Received:
March 31 2003
Accepted:
May 21 2003
Citation
A. Hierro, J.-M. Ulloa, J.-M. Chauveau, A. Trampert, M.-A. Pinault, E. Tournié, A. Guzmán, J. L. Sánchez-Rojas, E. Calleja; Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy. J. Appl. Phys. 15 August 2003; 94 (4): 2319–2324. https://doi.org/10.1063/1.1591416
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
Appl. Phys. Lett. (May 2003)
Impact of N on the lasing characteristics of GaInNAs ∕ GaAs quantum well lasers emitting from 1.29 to 1.52 μ m
Appl. Phys. Lett. (December 2005)
Positron annihilation study of vacancies in GaInNAs
J. Vac. Sci. Technol. B (June 2004)
Annealing-induced-type conversion of GaInNAs
Journal of Applied Physics (February 2004)
Cathodoluminescence investigations of GaInNAs on Ga As ( 111 ) B
Appl. Phys. Lett. (December 2006)