The generation–recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al0.30Ga0.70As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about σ0≃1×10−11cm2, and a total integrated defect concentration of about Nts≃1.4×1010cm−2.

1.
S.
Wirth
and
S.
von Molnar
,
Appl. Phys. Lett.
76
,
3283
(
2000
).
2.
Y.
Li
,
P.
Xiong
,
S.
von Molnar
,
S.
Wirth
,
Y.
Ohno
, and
H.
Ohno
,
Appl. Phys. Lett.
80
,
4644
(
2002
).
3.
M.
Charalambous
,
R. H.
Koch
,
T.
Masselink
,
T.
Doany
,
C.
Feild
, and
F.
Holtzberg
,
Phys. Rev. Lett.
75
,
2578
(
1995
).
4.
E.
Zeldov
,
D.
Mayer
,
M.
Konczykowski
,
V. B.
Geshkenbein
,
V. M.
Vinokur
, and
H.
Shtrikman
,
Nature (London)
375
,
373
(
1995
).
5.
A. K.
Geim
,
S. V.
Dubonos
,
I. V.
Grigorieva
,
K. S.
Novoselov
,
F. M.
Peeters
, and
V. A.
Schweigert
,
Nature (London)
407
,
55
(
2000
).
6.
A.
Oral
,
S. J.
Bending
, and
M.
Henini
,
Appl. Phys. Lett.
69
,
1324
(
1996
).
7.
A.
Thiaville
,
L.
Belliard
,
D.
Majer
,
E.
Zeldov
, and
J.
Miltat
,
J. Appl. Phys.
82
,
3182
(
1997
).
8.
Y. Sugiyama, T. Taguchi, and M. Tacano, Proceedings 6th Sensor Symposium, Japan, 1986, p. 55.
9.
Y.
Sugiyama
,
H.
Soga
, and
M.
Tacano
,
J. Cryst. Growth
95
,
394
(
1989
).
10.
S. D.
Medico
et al.,
Semicond. Sci. Technol.
11
,
576
(
1996
).
11.
M.
Behet
,
J.
Bekaert
,
J. De.
Boeck
, and
G.
Borghs
,
Sens. Actuators A
81
,
13
(
2000
).
12.
V. P.
Kunets
,
W.
Hoerstel
,
H.
Kostial
,
H.
Kissel
,
U.
Müller
,
G. G.
Tarasov
,
Yu. I.
Mazur
,
Z. Ya.
Zhuchenko
, and
W. T.
Masselink
,
Sens. Actuators A
101
,
62
(
2002
).
13.
M.
Tacano
,
T.
Kanayama
,
H.
Hiroshima
,
M.
Komuro
, and
Y.
Sugiyama
,
J. Appl. Phys.
62
,
4301
(
1987
).
14.
J.
Berntgen
,
A.
Behres
,
J.
Kluth
,
K.
Heime
,
W.
Daumann
,
U.
Auer
, and
F.-J.
Tegude
,
Microelectron. Reliab.
40
,
1911
(
2000
).
15.
M. E.
Levinshtein
and
S. L.
Rumyantsev
,
Semicond. Sci. Technol.
9
,
1183
(
1994
).
16.
P. M.
Mooney
,
N. S.
Caswell
, and
S. L.
Wright
,
J. Appl. Phys.
62
,
4786
(
1987
).
17.
N.
Chand
,
T.
Henderson
,
J.
Klem
,
W. T.
Masselink
,
R.
Fisher
,
Y. C.
Chang
, and
H.
Morkoç
,
Phys. Rev. B
30
,
4481
(
1984
).
18.
P. M.
Mooney
,
J. Appl. Phys.
67
,
R1
(
1990
).
19.
J. R.
Kirtley
,
T. N.
Theis
,
P. M.
Mooney
, and
S. L.
Wright
,
J. Appl. Phys.
63
,
1541
(
1988
).
This content is only available via PDF.
You do not currently have access to this content.