The refractive indices of several alloys deposited on silicon are determined by ellipsometry and reflectivity experiments at room temperature. The AlGaN layers are grown on (111)Si substrate by molecular-beam epitaxy on top of an AlN/GaN/AlN buffer in order to reduce the strain of the alloy. The Al composition is deduced from energy dispersive x-ray spectroscopy and photoluminescence experiments. The refractive index n and the extinction coefficient k are determined in the 300–600 nm range. For the transparent region of the refractive index is given in form of a Sellmeier law.
Determination of the refractive indices of AlN, GaN, and grown on (111)Si substrates
N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies; Determination of the refractive indices of AlN, GaN, and grown on (111)Si substrates. J. Appl. Phys. 1 May 2003; 93 (9): 5222–5226. https://doi.org/10.1063/1.1563293
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