Asymmetric metal–ferroelectric–metal (MFM) structures were manufactured by sol–gel deposition of a lead zirconate-titanate (PZT with Zr/Ti ratio 65/35) film on Pt-coated Si, with a Au top electrode. The average remnant polarization of 9 μC/cm2 and the coercive field of 39 kV/cm were obtained from the hysteresis loop measurements. A detailed analysis of the polarization–electric field capacitance–voltage and current–voltage measurement results allowed us to estimate the near-electrode space-charge region thickness (roughly half of the film thickness at zero voltage), net doping concentration (around built-in potential (in the 0.4–0.8 V range, depending on the injecting electrode), and dynamic dielectric constant (5.2). The current logarithm–voltage dependence for the field-enhanced Schottky emission obeys a “1/4” law. The spectral distribution of the short circuit current measured under continuous light illumination in the 290–800 nm range exhibits a cutoff wavelength at 370 nm and a maximum sensitivity at about 340 nm. The estimated band-gap energy of the PZT material is 3.35 eV. The MFM structure is discussed in terms of two back-to-back Schottky diodes with a ferroelectric material in between. It is concluded that the semiconductor properties of the films are not negligible and, in certain conditions, are dominating over the ferroelectric ones.
Skip Nav Destination
,
,
,
,
Article navigation
15 April 2003
Research Article|
April 15 2003
Competition between ferroelectric and semiconductor properties in thin films deposited by sol–gel
I. Boerasu;
I. Boerasu
Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
Search for other works by this author on:
L. Pintilie;
L. Pintilie
National Institute for Materials Physics, Bucharest-Magurele, P.O. Box MG-7, Romania
Search for other works by this author on:
M. Pereira;
M. Pereira
Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
Search for other works by this author on:
M. I. Vasilevskiy;
M. I. Vasilevskiy
Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
Search for other works by this author on:
M. J. M. Gomes
M. J. M. Gomes
Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
Search for other works by this author on:
I. Boerasu
L. Pintilie
M. Pereira
M. I. Vasilevskiy
M. J. M. Gomes
Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
J. Appl. Phys. 93, 4776–4783 (2003)
Article history
Received:
October 21 2002
Accepted:
January 27 2003
Citation
I. Boerasu, L. Pintilie, M. Pereira, M. I. Vasilevskiy, M. J. M. Gomes; Competition between ferroelectric and semiconductor properties in thin films deposited by sol–gel. J. Appl. Phys. 15 April 2003; 93 (8): 4776–4783. https://doi.org/10.1063/1.1562009
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Introduction to neuromorphic functions of memristors: The inductive nature of synapse potentiation
So-Yeon Kim, Heyi Zhang, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.