Competition between ferroelectric and semiconductor properties in $Pb(Zr0.65Ti0.35)O3$ thin films deposited by sol–gel Available to Purchase

Asymmetric metal–ferroelectric–metal (MFM) structures were manufactured by sol–gel deposition of a lead zirconate-titanate (PZT with Zr/Ti ratio 65/35) film on Pt-coated Si, with a Au top electrode. The average remnant polarization of 9 μC/cm² and the coercive field of 39 kV/cm were obtained from the hysteresis loop measurements. A detailed analysis of the polarization–electric field $(P–E),$ capacitance–voltage $(C–V),$ and current–voltage $(I–V)$ measurement results allowed us to estimate the near-electrode space-charge region thickness (roughly half of the film thickness at zero voltage), net doping concentration (around $1018 cm−3),$ built-in potential (in the 0.4–0.8 V range, depending on the injecting electrode), and dynamic dielectric constant (5.2). The current logarithm–voltage dependence for the field-enhanced Schottky emission obeys a “1/4” law. The spectral distribution of the short circuit current measured under continuous light illumination in the 290–800 nm range exhibits a cutoff wavelength at 370 nm and a maximum sensitivity at about 340 nm. The estimated band-gap energy of the PZT material is 3.35 eV. The MFM structure is discussed in terms of two back-to-back Schottky diodes with a ferroelectric material in between. It is concluded that the semiconductor properties of the films are not negligible and, in certain conditions, are dominating over the ferroelectric ones.