The optical properties of wurtzite (WZ) InGaN/GaN quantum well (QW) lasers are investigated using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. These results are also compared with those of (0001)-oriented WZ InGaN/GaN QW with piezoelectric and spontaneous polarizations taken into account. The optical gain of the QW is largely enhanced over that of the (0001)-oriented QW. This can be explained by the fact that the optical matrix elements near the band edge of the InGaN/GaN QW significantly increase compared to that of the (0001)-oriented structure, in addition to the reduction of the effective mass. The threshold current density of the QW is expected to be about half that of the (0001)-oriented QW structure.
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15 June 2003
Research Article|
June 15 2003
Effect of crystal orientation on many-body optical gain of wurtzite InGaN/GaN quantum well
Seoung-Hwan Park
Seoung-Hwan Park
Department of Physics and Semiconductor Science, Catholic University of Daegu, Hayang, Kyeongbuk 712-702, Korea
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J. Appl. Phys. 93, 9665–9668 (2003)
Article history
Received:
February 11 2003
Accepted:
April 02 2003
Citation
Seoung-Hwan Park; Effect of crystal orientation on many-body optical gain of wurtzite InGaN/GaN quantum well. J. Appl. Phys. 15 June 2003; 93 (12): 9665–9668. https://doi.org/10.1063/1.1577402
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