Completely coalesced epitaxial lateral overgrowth (ELO) of GaN on silicon (111) is presented for ELO layer thicknesses below 3 μm. Fast lateral expansion of the ELO-GaN was achieved by metalorganic vapor phase epitaxy at high growth temperature (1120 °C), low pressure (100 mbar), and a high V/III ratio of 8000. Thus full coalescence and a smooth surface (roughness of 5 nm across 100 μm2) are accomplished for wide masks along with a 10 μm period and 3 μm openings. Atomic force microscopy and transmission electron microscopy are used to assess the quality of the layers. The density of dislocations is reduced from in the GaN template down to above the mask openings, and finally to in the laterally overgrown regions. The corresponding strong improvement of the optical properties and the stress present within the epilayer are evidenced by scanning cathodoluminescence microscopy.
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1 January 2003
Research Article|
January 01 2003
Epitaxial lateral overgrowth of GaN on Si (111)
E. Feltin;
E. Feltin
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, 06560 Valbonne, France
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B. Beaumont;
B. Beaumont
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, 06560 Valbonne, France
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P. Vennéguès;
P. Vennéguès
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, 06560 Valbonne, France
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M. Vaille;
M. Vaille
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, 06560 Valbonne, France
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P. Gibart;
P. Gibart
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, 06560 Valbonne, France
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T. Riemann;
T. Riemann
Otto-von-Guericke-University, Institute of Experimental Physics, PF 4120, 39016 Magdeburg, Germany
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J. Christen;
J. Christen
Otto-von-Guericke-University, Institute of Experimental Physics, PF 4120, 39016 Magdeburg, Germany
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L. Dobos;
L. Dobos
Research Institute for Technical Physics and Material Science, P.O. Box 49, H-1525 Budapest, Hungary
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B. Pécz
B. Pécz
Research Institute for Technical Physics and Material Science, P.O. Box 49, H-1525 Budapest, Hungary
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J. Appl. Phys. 93, 182–185 (2003)
Article history
Received:
May 28 2002
Accepted:
August 30 2002
Citation
E. Feltin, B. Beaumont, P. Vennéguès, M. Vaille, P. Gibart, T. Riemann, J. Christen, L. Dobos, B. Pécz; Epitaxial lateral overgrowth of GaN on Si (111). J. Appl. Phys. 1 January 2003; 93 (1): 182–185. https://doi.org/10.1063/1.1516838
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