Solar blind metal–semiconductor–metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy. Submicron finger spacings were obtained by electron-beam lithography, and allowed us to demonstrate a significant improvement of the responsivity and the spectral selectivity. These results were explained by numerical two-dimensional calculations of the electric-field distribution. The simulation also explained the dependence of the response on applied bias.
Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation
J. Y. Duboz, J. L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies; Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation. J. Appl. Phys. 1 November 2002; 92 (9): 5602–5604. https://doi.org/10.1063/1.1499741
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