Scaling down of the microelectronic devices feature size is demanding high-quality ultra thin high-k gate dielectric as a potential replacement for gate dielectric. Among the high-k materials, is considered as a potential alternative to gate dielectric below 2 nm due to its thermodynamical stability as well as excellent electrical properties. For these reasons, we investigated films prepared by the normal atomic layer deposition (ALD) and plasma enhanced ALD (PEALD) techniques using Zr t–butoxide and metal organic precursors. This study showed that films deposited by the PEALD method showed generally improved film qualities with relatively low-leakage current, negligible hysteresis, and low-carbon incorporation compared to those of the films deposited by the conventional ALD method. Also, films deposited using precursor showed better film qualities than those of films deposited using Zr t–butoxide. Especially, films deposited using with oxygen plasma showed the leakage current as low as about with an equivalent oxide thickness value of about 1.4 nm. This study demonstrated the possible application of the PEALD technique for the high-quality ultra thin high-k gate dielectric film deposition.
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1 November 2002
Research Article|
November 01 2002
Characteristics of gate dielectric deposited using Zr t–butoxide and precursors by plasma enhanced atomic layer deposition method
Yangdo Kim;
Yangdo Kim
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Jaehyoung Koo;
Jaehyoung Koo
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Jiwoong Han;
Jiwoong Han
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Sungwoo Choi;
Sungwoo Choi
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Hyeongtag Jeon;
Hyeongtag Jeon
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Chan-Gyung Park
Chan-Gyung Park
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
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J. Appl. Phys. 92, 5443–5447 (2002)
Article history
Received:
May 28 2002
Accepted:
August 19 2002
Citation
Yangdo Kim, Jaehyoung Koo, Jiwoong Han, Sungwoo Choi, Hyeongtag Jeon, Chan-Gyung Park; Characteristics of gate dielectric deposited using Zr t–butoxide and precursors by plasma enhanced atomic layer deposition method. J. Appl. Phys. 1 November 2002; 92 (9): 5443–5447. https://doi.org/10.1063/1.1513196
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