Interactions between shallow implanted boron and high-energy silicon implants have been investigated. Athermal annealing of implantation damage induced by low energy boron implants at room temperature was observed after coimplantation and such annealing effects were more obvious when the dosage of preimplanted Si was increased. Electrical measurements after rapid thermal annealing showed that the activation of B was greatly increased with the dosages of high-energy Si coimplantation. An enhancement of substitutional ratio of B was observed by aligned nuclear reaction analysis.
REFERENCES
1.
http://public.itrs.net
2.
P. M.
Fahey
, P. B.
Griffin
, and J. D.
Plummer
, Rev. Mod. Phys.
61
, 289
(1989
).3.
P. A.
Stolk
, H.-J.
Gossmann
, D. J.
Eaglesham
, D. C.
Jacobson
, C. S.
Rafferty
, G. H.
Gilmer
, M.
Jaraiz
, J. M.
Poate
, H. S.
Luftman
, and T. E.
Haynes
, J. Appl. Phys.
81
, 6031
(1997
).4.
A.
Agarwal
, H-J.
Gossmann
, D. J.
Eaglesham
, S. B.
Herner
, A. T.
Fiory
, and T. E.
Haynes
, Appl. Phys. Lett.
74
, 2435
(1999
).5.
6.
7.
V.
Raineri
, R. J.
Schreutelkamp
, F. W.
Saris
, K. T. F.
Jansen
, and R. E.
Kaim
, Appl. Phys. Lett.
58
, 922
(1991
).8.
9.
V. C.
Venezia
, T. E.
Haynes
, A.
Agarwal
, L.
Pelaz
, H.-J.
Gossmann
, D. C.
Jacobson
, and D. J.
Eaglesham
, Appl. Phys. Lett.
74
, 1299
(1999
).10.
B.
Nielsen
, O. W.
Holland
, T. C.
Laung
, and K. G.
Lynn
, J. Appl. Phys.
74
, 1636
(1993
).11.
C.
Szeles
, B.
Nielsen
, P.
Asoka-Kumar
, K. G.
Lynn
, M.
Anderle
, T. P.
Ma
, and G. W.
Rubloff
, J. Appl. Phys.
76
, 3403
(1994
).12.
S. L.
Ellingboe
and M. C.
Ridgway
, Nucl. Instrum. Methods Phys. Res. B
127
, 90
(1997
).13.
M.
Yoon
, B. C.
Larson
, J. Z.
Tischler
, T. E.
Haynes
, J.-S.
Chung
, G. E.
Ice
, and P.
Zschack
, Appl. Phys. Lett.
75
, 2791
(1999
).14.
V. C.
Venezia
, D. J.
Eaglesham
, T. E.
Haynes
, A.
Agarwal
, D. C.
Jacobson
, H.-J.
Gossmann
, and F. H.
Baumann
, Appl. Phys. Lett.
73
, 2980
(1998
).15.
R.
Kalyanaraman
, T. E.
Haynes
, V. C.
Venezia
, D. C.
Jacobson
, H.-J.
Gossmann
, and C. S.
Rafferty
, Appl. Phys. Lett.
76
, 3379
(2000
).16.
G.
Lulli
, M.
Bianconi
, S.
Solmi
, E.
Napolitani
, and A.
Carnera
, J. Appl. Phys.
87
, 8461
(2000
).17.
L.
Shao
, X.
Lu
, X.
Wang
, I.
Rusokeva
, J.
Liu
, and W. K.
Chu
, Appl. Phys. Lett.
78
, 2321
(2001
).18.
Software is available at http://www.SRIM.org;
Also see
J. P.
Biersack
and L. G.
Haggmark
, Nucl. Instrum. Methods
174
, 257
(1980
).19.
W. K.
Chu
, E.
Lugujjo
, J. W.
Mayer
, and T. W.
Sigmon
, Thin Solid Films
19
, 329
(1973
).20.
T. W.
Sigmon
, W. K.
Chu
, E.
Lugujjo
, and J. W.
Mayer
, Appl. Phys. Lett.
24
, 105
(1974
).21.
R. G.
Elliman
, J.
Linnros
, and W. L.
Brown
, Mater. Res. Soc. Symp. Proc.
100
, 363
(1988
).22.
K. T.
Short
, D. J.
Chives
, R. G.
Elliman
, J.
Liu
, A. P.
Pogany
, H. K.
Wagenfeld
, and J. S.
Williams
, Mater. Res. Soc. Symp. Proc.
27
, 247
(1984
).23.
24.
N.
Cowern
, G.
Mannino
, P. A.
Stolk
, F.
Roozeboom
, H. G. A.
Huizing
, J. G. M.
van Berkum
, F.
Cristiano
, and A.
Claverie
, Phys. Rev. Lett.
82
, 4460
(1999
).
This content is only available via PDF.
© 2002 American Institute of Physics.
2002
American Institute of Physics
You do not currently have access to this content.
