and metastable ternary phases were formed by sequentially implanting Co, Ni, and Fe into Si (111) at 623 K. In order to compare the phases formed by ion implantation, the stable bulk ternary phase with a wide variety of values was synthesized. The samples were studied by Mössbauer effect, transmission electron microscopy (TEM), x-ray diffraction, and Rutherford backscattering and channeling. X-ray diffraction and TEM results on the as-implanted samples with indicate a cubic (fluorite) structure. Mössbauer spectra show three resonanceline components. Comparison of the isomer shift values of the components with those measured in the stable and metastable transition-metal silicide phases indicated three different sites for iron atoms: Fe substituting Co or Ni; Fe in the empty cubes of the fluorite-type lattices; and Fe populating sites in the CsCl-type B2 lattice. In samples of annealed at 1273 K, and a fraction of Fe dissolved in appeared. It was found that Fe is more soluble (maximum 30 at. %) in than it is in Implanting and annealing Co or Ni or both Co and Ni at relatively low concentration in Si already implanted with Fe resulted in with Co, Ni, and content, respectively. The hyperfine interaction parameters of were slightly modified by the dissolved Co and Ni in the lattice.
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1 October 2002
Research Article|
October 01 2002
Ternary and formed by ion implantation in silicon
Cs. Fetzer;
Cs. Fetzer
KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest 114, Hungary
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I. Dézsi;
I. Dézsi
KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest 114, Hungary
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A. Vantomme;
A. Vantomme
Instituut voor Kern- en Stralingsfysika, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
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M. F. Wu;
M. F. Wu
Instituut voor Kern- en Stralingsfysika, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
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S. Jin;
S. Jin
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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H. Bender
H. Bender
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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J. Appl. Phys. 92, 3688–3693 (2002)
Article history
Received:
January 07 2002
Accepted:
July 11 2002
Citation
Cs. Fetzer, I. Dézsi, A. Vantomme, M. F. Wu, S. Jin, H. Bender; Ternary and formed by ion implantation in silicon. J. Appl. Phys. 1 October 2002; 92 (7): 3688–3693. https://doi.org/10.1063/1.1505673
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