Photoluminescence and electroluminescence from a superlattice have been measured. They show similar characteristics and exhibit an inhomogeneously broadened photoluminescence band peaked at 2.06 eV. The excitation spectrum indicates that excitations occur in the Si layers. The insensitivity of the luminescence spectrum and decay to temperature and excitation wavelength suggests that luminescence originates from transitions between localized defect states. These localized states are most likely defect states residing at the interfaces, because there should be a significant concentration of defects at the interface and due to the large lattice mismatch and the amorphous state. The close proximity of these states offers a more rapid transition path for the excited electrons. An energy band diagram of the superlattice is constructed based on our results.
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1 October 2002
Research Article|
October 01 2002
Luminescence studies of a superlattice
B. Averboukh;
B. Averboukh
Department of Physics, University of California at Berkeley, 366, Le Conte Hall, Berkeley, California 94720-7300
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R. Huber;
R. Huber
Department of Physics, University of California at Berkeley, 366, Le Conte Hall, Berkeley, California 94720-7300
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K. W. Cheah;
K. W. Cheah
Department of Physics, University of California at Berkeley, 366, Le Conte Hall, Berkeley, California 94720-7300
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Y. R. Shen;
Y. R. Shen
Department of Physics, University of California at Berkeley, 366, Le Conte Hall, Berkeley, California 94720-7300
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G. G. Qin;
G. G. Qin
Department of Physics, Peking University, Beijing, China
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Z. C. Ma;
Z. C. Ma
The National Laboratory for GaAs IC, 13th Institute of Ministry of Electronic Industry, Shijiazhuang 050051, China
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W. H. Zong
W. H. Zong
The National Laboratory for GaAs IC, 13th Institute of Ministry of Electronic Industry, Shijiazhuang 050051, China
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J. Appl. Phys. 92, 3564–3568 (2002)
Article history
Received:
September 10 2001
Accepted:
June 13 2002
Citation
B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, W. H. Zong; Luminescence studies of a superlattice. J. Appl. Phys. 1 October 2002; 92 (7): 3564–3568. https://doi.org/10.1063/1.1498960
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