A cold electron emitter has been fabricated based on nanocrystalline silicon (nc-Si) quantum dots formed in the gas phase by very-high-frequency plasma decomposition of A small size of less than 10 nm and the spherical shape of the nc-Si dots facilitated the generation of hot electrons. Electrons with kinetic energies higher than the work function of the top electrode were extracted into vacuum through the electrode. A planarization process of the nc-Si layer by annealing enhanced the electron emission efficiency to 5%. Efficiency was optimized by varying the thicknesses of the nc-Si layer, the layer, and the top electrode film.
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