In this article a multisample modification of variable angle spectroscopic ellipsometry is used to characterize ZnSe thin films prepared by molecular beam epitaxy on substrates formed by GaAs single crystals. Atomic force microscopy (AFM) is employed to characterize the morphology of the upper boundaries of these films. To interpret the ellipsometric data a relatively complicated physical model that contains a rough overlayer between the ambient and the ZnSe film and a transition layer between the GaAs substrate and the ZnSe film is employed. Several models of dispersion of the optical constants of the overlayers are examined to interpret the ellipsometric data. It is shown that the choice of overlayer dispersion model has a strong influence on determining the optical constants and dielectric function of the ZnSe films in the near-UV region. Within the visible region there are no differences between the overlayer dispersion models regarding determination of the ZnSe optical constants. The spectral dependences of the ZnSe dielectric function obtained are compared with those presented by other researchers. Further, by AFM it is shown that the upper boundaries of the ZnSe films are randomly rough and partially covered with small objects.
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15 August 2002
Research Article|
July 30 2002
Influence of overlayers on determination of the optical constants of ZnSe thin films
Daniel Franta;
Daniel Franta
Laboratory of Plasma Physics and Plasma Sources, Faculty of Science, Masaryk University, Kotlářská 2, 611 37 Brno, Czech Republic
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Ivan Ohlídal;
Ivan Ohlídal
Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37 Brno, Czech Republic
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Petr Klapetek;
Petr Klapetek
Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37 Brno, Czech Republic
Czech Metrology Institute, Okružní 31, 638 00 Brno, Czech Republic
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Alberto Montaigne-Ramil;
Alberto Montaigne-Ramil
Institute of Semiconductor Physics, Johannes Kepler University, Altenbergerstrasse, 69, A-4040 Linz, Austria
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Alberta Bonanni;
Alberta Bonanni
Institute of Semiconductor Physics, Johannes Kepler University, Altenbergerstrasse, 69, A-4040 Linz, Austria
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David Stifter;
David Stifter
Institute of Semiconductor Physics, Johannes Kepler University, Altenbergerstrasse, 69, A-4040 Linz, Austria
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Helmut Sitter
Helmut Sitter
Institute of Semiconductor Physics, Johannes Kepler University, Altenbergerstrasse, 69, A-4040 Linz, Austria
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J. Appl. Phys. 92, 1873–1880 (2002)
Article history
Received:
November 21 2001
Accepted:
May 02 2002
Citation
Daniel Franta, Ivan Ohlídal, Petr Klapetek, Alberto Montaigne-Ramil, Alberta Bonanni, David Stifter, Helmut Sitter; Influence of overlayers on determination of the optical constants of ZnSe thin films. J. Appl. Phys. 15 August 2002; 92 (4): 1873–1880. https://doi.org/10.1063/1.1489068
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