We have prepared films by the atomic layer deposition technique using trimethylaluminum as the precursor for aluminum and instead of commonly used as an oxidant. We show that even without any postdeposition annealing or any preventive layer between the film and Si substrate to suppress the formation of metallic clusters, the films prepared using have significantly less amount of defect states like Al–Al and OH bonds compared with those prepared by The films show device quality leakage characteristics, with film prepared with showing a leakage current density one or two orders lower and a smaller flatband voltage shift than that of film prepared with demonstrating improved interface characteristics. The former also shows a very low wet etch rate.
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1 December 2002
Research Article|
December 01 2002
Improvement in dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique
J. B. Kim;
J. B. Kim
Department of Materials Science and Engineering, Inha University, 253 Younghyun-dong, Nam-Ku, Inchon 402-751, Republic of Korea
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D. R. Kwon;
D. R. Kwon
Department of Materials Science and Engineering, Inha University, 253 Younghyun-dong, Nam-Ku, Inchon 402-751, Republic of Korea
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K. Chakrabarti;
K. Chakrabarti
Department of Materials Science and Engineering, Inha University, 253 Younghyun-dong, Nam-Ku, Inchon 402-751, Republic of Korea
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Chongmu Lee;
Chongmu Lee
Department of Materials Science and Engineering, Inha University, 253 Younghyun-dong, Nam-Ku, Inchon 402-751, Republic of Korea
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K. Y. Oh;
K. Y. Oh
Jusung Engineering Co. Ltd, 49 Neungpyeong-Ri, Opo-Eup, Kwangju-Gun, Kyunggi-Do 464-890, Republic of Korea
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J. H. Lee
J. H. Lee
Department of Ceramic Engineering, Yonsei University, 134 Sinchon-dong, Seodaemun-Ku, Seoul 120-749, Republic of Korea
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J. Appl. Phys. 92, 6739–6742 (2002)
Article history
Received:
May 14 2002
Accepted:
August 29 2002
Citation
J. B. Kim, D. R. Kwon, K. Chakrabarti, Chongmu Lee, K. Y. Oh, J. H. Lee; Improvement in dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique. J. Appl. Phys. 1 December 2002; 92 (11): 6739–6742. https://doi.org/10.1063/1.1515951
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