AuTiAlTi/AlGaN/GaN ohmic contact structures rapid thermal annealed at 650, 750, 850, and 950 °C have been analyzed using complementary transmission electron microscopy and electrical characterization techniques. The relationship between annealing temperature, interfacial microstructure, and contact resistance is examined. Annealing temperatures of 750 °C or higher are required to produce an ohmic contact. Contacts annealed at 750 and 850 °C show a planar interface between contact and the AlGaN layer, with minimal consumption of the AlGaN and the formation of a thin TiN interfacial layer. Annealing at 950 °C produces the lowest contact resistance, with a structure showing inclusions through the AlGaN/GaN layer. These inclusions are also shown to be a Ti-nitride, having an Al/Au-rich metallurgical barrier layer surrounding them. However, this metallurgical layer does not produce an electrical barrier.
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1 July 2002
Research Article|
July 01 2002
Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts Available to Purchase
M. W. Fay;
M. W. Fay
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
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G. Moldovan;
G. Moldovan
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
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P. D. Brown;
P. D. Brown
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
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I. Harrison;
I. Harrison
School of Electrical and Electronic Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
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J. C. Birbeck;
J. C. Birbeck
QinetiQ Ltd, St Andrews Rd, Malvern, Worcs WR14 3PS, United Kingdom
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B. T. Hughes;
B. T. Hughes
QinetiQ Ltd, St Andrews Rd, Malvern, Worcs WR14 3PS, United Kingdom
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M. J. Uren;
M. J. Uren
QinetiQ Ltd, St Andrews Rd, Malvern, Worcs WR14 3PS, United Kingdom
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T. Martin
T. Martin
QinetiQ Ltd, St Andrews Rd, Malvern, Worcs WR14 3PS, United Kingdom
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M. W. Fay
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
G. Moldovan
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
P. D. Brown
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
I. Harrison
School of Electrical and Electronic Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
J. C. Birbeck
QinetiQ Ltd, St Andrews Rd, Malvern, Worcs WR14 3PS, United Kingdom
B. T. Hughes
QinetiQ Ltd, St Andrews Rd, Malvern, Worcs WR14 3PS, United Kingdom
M. J. Uren
QinetiQ Ltd, St Andrews Rd, Malvern, Worcs WR14 3PS, United Kingdom
T. Martin
QinetiQ Ltd, St Andrews Rd, Malvern, Worcs WR14 3PS, United Kingdom
J. Appl. Phys. 92, 94–100 (2002)
Article history
Received:
December 27 2001
Accepted:
April 08 2002
Citation
M. W. Fay, G. Moldovan, P. D. Brown, I. Harrison, J. C. Birbeck, B. T. Hughes, M. J. Uren, T. Martin; Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts. J. Appl. Phys. 1 July 2002; 92 (1): 94–100. https://doi.org/10.1063/1.1481960
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