Interfacial reactions of Ni on $Si1−xGex$ $(x=0.2, 0.3)$ at low temperature by rapid thermal annealing Available to Purchase

The interfacial reaction of Ni with relaxed $Si1−xGex$ $(x=0.2,0.3)$ films in the low temperature range, viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., $x=0).$ $Ni2(Si1−xGex)$ and $Ni3(Si1−xGex)2$ were observed at 300 °C whereas a uniform film of $Ni(Si1−xGex)$ was formed at 400 °C for both $Si0.8Ge0.2$ and $Si0.7Ge0.3$ substrates. At 500 °C, a mixed layer consisting of $Ni(Si1−yGey)$ and $Si1−zGez$ was formed with a relation of $z>x>y.$ Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400 °C. The approximate values of the resistivity of the corresponding uniform $Ni(Si1−xGex)$ $(x=0.2, 0.3)$ derived from the transmission electron microscope and sheet resistance results are 19 and 23 μΩ cm, respectively.