Lead sulfide (PbS) thin films were deposited from a chemical bath onto (n-type) substrates. Pseudo-metal–oxide–semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800–2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage.
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Research Article| May 01 2002
Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide
L. Pintilie, E. Pentia, I. Matei, I. Pintilie, E. Ozbay; Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide. J. Appl. Phys. 1 May 2002; 91 (9): 5782–5786. https://doi.org/10.1063/1.1468277
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