We have studied the properties of InP self-assembled quantum dots embedded in various matrix layers to optimize the growth condition of the quantum dots and structures for III-phosphide quantum-dot-based lasers operating in visible spectral regions. Self-assembled quantum dot-related structures are grown by low-pressure metalogranic chemical vapor deposition and characterized by atomic-force microscopy, high-resolution transmission-electron microscopy, and photoluminescence. High density and conveniently sized quantum dots are produced by growth condition optimization. We find that the quantum-dot heterostructure with a matrix layer having the largest direct band gap produces the most efficient luminescence at room temperature. Laser structures are prepared using optimized growth conditions and matrix materials. Laser operation with lasing wavelengths are demonstrated at 77 and 300 K by optical pumping.
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15 April 2002
Research Article|
April 15 2002
Properties of InP self-assembled quantum dots embedded in for visible light emitting laser applications grown by metalorganic chemical vapor deposition
J. H. Ryou;
J. H. Ryou
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758
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R. D. Dupuis;
R. D. Dupuis
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758
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G. Walter;
G. Walter
Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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N. Holonyak, Jr.;
N. Holonyak, Jr.
Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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D. T. Mathes;
D. T. Mathes
Department of Materials Science and Engineering, The University of Virginia, Charlottesville, Virginia 22906
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R. Hull;
R. Hull
Department of Materials Science and Engineering, The University of Virginia, Charlottesville, Virginia 22906
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C. V. Reddy;
C. V. Reddy
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge Massachusetts 02138
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V. Narayanamurti
V. Narayanamurti
Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge Massachusetts 02138
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J. Appl. Phys. 91, 5313–5320 (2002)
Article history
Received:
August 27 2001
Accepted:
December 30 2001
Citation
J. H. Ryou, R. D. Dupuis, G. Walter, N. Holonyak, D. T. Mathes, R. Hull, C. V. Reddy, V. Narayanamurti; Properties of InP self-assembled quantum dots embedded in for visible light emitting laser applications grown by metalorganic chemical vapor deposition. J. Appl. Phys. 15 April 2002; 91 (8): 5313–5320. https://doi.org/10.1063/1.1454205
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