Charge transfer and accumulation at semiconductor devices can lead to device degradation. Understanding and controlling such a process is therefore important. Second harmonic generation has been shown to be a sensitive probe of charging of semiconductor interfaces, with the added advantages of high spatial and temporal resolution. We have investigated the use of self assembled monolayers (SAMs) as a means to control charging. Our results suggest that octadecylsiloxane SAMs, bound to the native oxide, significantly reduce charge accumulation at oxide interfaces.
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