Mn-doped GaN films on sapphire (0001) substrates were grown by molecular beam epitaxy system using ammonia as nitrogen source. The result of magnetization measurement gives Curie temperature as high as 940 K. The field and temperature dependencies of the magnetization show coexistence of ferromagnetic and paramagnetic phases. In addition, the temperature dependencies of electrical resistance and carrier concentration were measured to investigate the relation between the ferromagnetism and transport property. Below about 10 K, a similar anomalous increase of magnetization and resistance is observed.
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