Epitaxial growth of (111)-oriented has been achieved on a scratch-free substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality thin film was obtained by a modified template method and co-deposition of Co and Si at The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.
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2001
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