Growth of epitaxial $CoSi2$ on $6H-SiC(0001)Si$

Epitaxial growth of (111)-oriented $CoSi2$ has been achieved on a scratch-free $6H-SiC(0001)Si$ substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality $CoSi2$ thin film was obtained by a modified template method and co-deposition of Co and Si at $550 °C.$ The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.