Defects in GaN grown using metalorganic chemical vapor deposition were studied through the use of monoenergetic positron beams. For Mg-doped GaN, no large change in the diffusion length of positrons was observed before and after activation of Mg. This was attributed to the scattering of positrons by potentials caused by electric dipoles of Mg–hydrogen pairs. For Si-doped GaN, the line-shape parameter S increased as carrier density increased, suggesting an introduction of Ga vacancy due to the Fermi level effect. Based on these results, we discuss the effects of the growth polar direction of GaN on optical properties in this article. Although the optical properties of a GaN film grown toward the Ga face direction exhibited excitonic features, a film grown toward the N face direction exhibited broadened photoluminescence and transmittance spectra, and a Stokes shift of about 20 meV was observed. This difference was attributed to extended band-tail states introduced by high concentrations of donors and acceptor-type defects in
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1 July 2001
Research Article|
July 01 2001
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
A. Uedono;
A. Uedono
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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S. F. Chichibu;
S. F. Chichibu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Z. Q. Chen;
Z. Q. Chen
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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M. Sumiya;
M. Sumiya
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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R. Suzuki;
R. Suzuki
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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T. Ohdaira;
T. Ohdaira
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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T. Mikado;
T. Mikado
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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T. Mukai;
T. Mukai
Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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S. Nakamura
S. Nakamura
Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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J. Appl. Phys. 90, 181–186 (2001)
Article history
Received:
January 04 2001
Accepted:
March 22 2001
Citation
A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai, S. Nakamura; Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams. J. Appl. Phys. 1 July 2001; 90 (1): 181–186. https://doi.org/10.1063/1.1372163
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