We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors (QDIPs) based on InAs/GaAs epitaxical island quantum dots (QDs) grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional transmission electron microscopy and atomic force microscopy. The electronic properties of the QDs inserted in QDIP devices were investigated with photoluminescence (PL), PL excitation, and intra- and inter-band photocurrent spectroscopy. The influence of AlGaAs layers inserted into the QDIP active regions on the performance of dark current and inter- and intra-band photocurrent was examined. Initial results on intra-band responsivity and detectivity of these QDIPs at 77 K with undoped active region show promise for application.
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15 April 2001
Research Article|
April 15 2001
Normal incidence quantum dot infrared photodetectors with undoped active region
Zhonghui Chen;
Zhonghui Chen
Departments of Materials Science and Physics, University of Southern California, Los Angeles, California 90089-0241
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O. Baklenov;
O. Baklenov
Departments of Materials Science and Physics, University of Southern California, Los Angeles, California 90089-0241
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E. T. Kim;
E. T. Kim
Departments of Materials Science and Physics, University of Southern California, Los Angeles, California 90089-0241
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I. Mukhametzhanov;
I. Mukhametzhanov
Departments of Materials Science and Physics, University of Southern California, Los Angeles, California 90089-0241
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J. Tie;
J. Tie
Departments of Materials Science and Physics, University of Southern California, Los Angeles, California 90089-0241
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A. Madhukar;
A. Madhukar
Departments of Materials Science and Physics, University of Southern California, Los Angeles, California 90089-0241
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Z. Ye;
Z. Ye
Microelectronics Research Center, Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712
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J. C. Campbell
J. C. Campbell
Microelectronics Research Center, Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712
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J. Appl. Phys. 89, 4558–4563 (2001)
Article history
Received:
November 21 2000
Accepted:
January 24 2001
Citation
Zhonghui Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, J. C. Campbell; Normal incidence quantum dot infrared photodetectors with undoped active region. J. Appl. Phys. 15 April 2001; 89 (8): 4558–4563. https://doi.org/10.1063/1.1356430
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