Optical absorption and magnetic susceptibility data of the family of compounds have been collected in the temperature range 10–300 K. One of the most interesting aspects of this series is the availability of samples in the whole composition range, in contrast with most diluted magnetic semiconductors that are only miscible in a limited range of compositions. Temperature-independent absorption bands with maxima at 2.33, 2.49, and 2.66 eV have been found that are assigned to electron transitions from the ground state to the and or excited states of the ion in a tetrahedral crystalline field. The optical spectra exhibit a temperature dependent absorption edge in the 350–600 nm region that corresponds to a direct band gap. The band gap energy has been determined as a function of atomic concentration and temperature. At room temperature, the variation of the energy gap with the Mn content shows a rather anomalous behavior that consists of an initial decrease for x<0.1, followed by a roughly flat variation for and a nearly linear increase for An analogous evolution of with x is found when decreasing temperature. Such behavior has been compared with that reported for analogous systems. The variation of with temperature follows Varshni’s relation for all compositions. A monotonic increase of the magnetic susceptibility with x is found within the whole range of Mn content.
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1 February 2001
Research Article|
February 01 2001
Optical absorption of diluted magnetic semiconductors: Variation of the energy gap with composition and temperature
A. Millán;
A. Millán
Instituto de Ciencia de Materiales de Aragón (ICMA), C.S.I.C.-Universidad de Zaragoza, Ciudad Universitaria, E-50009 Zaragoza, Spain
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M. C. Morón
M. C. Morón
Instituto de Ciencia de Materiales de Aragón (ICMA), C.S.I.C.-Universidad de Zaragoza, Ciudad Universitaria, E-50009 Zaragoza, Spain
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J. Appl. Phys. 89, 1687–1691 (2001)
Article history
Received:
January 04 2000
Accepted:
November 08 2000
Citation
A. Millán, M. C. Morón; Optical absorption of diluted magnetic semiconductors: Variation of the energy gap with composition and temperature. J. Appl. Phys. 1 February 2001; 89 (3): 1687–1691. https://doi.org/10.1063/1.1337601
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