InGaAs/AlAsSb quantum well structures have been grown by molecular beam epitaxy nominally lattice matched to InP substrates and characterized by photoluminescence. Growth interruptions at interfaces combined with selective group V species exposure were used. Our results indicate that interface quality: interface roughness as well as compositional variations involving group V sublattice species intermixing determine the nature of band alignment at heterointerfaces. The type I band lineup with band-edge discontinuity was estimated to be about 1.6 eV for As-terminated samples, which exhibit the lowest compositional fluctuations across heterointerfaces. The photoluminescence linewidths from InGaAs/AlAsSb quantum wells agree with linewidths calculated on the assumption of 1 ML fluctuations in well width. The inhomogeneous nature of the intermixed layers results in a large broadening of the luminescence spectra line shape for samples grown without termination or Sb termination.
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Research Article| January 15 2001
Photoluminescence study of InGaAs/AlAsSb heterostructure
Nikolai Georgiev, Teruo Mozume; Photoluminescence study of InGaAs/AlAsSb heterostructure. J. Appl. Phys. 15 January 2001; 89 (2): 1064–1069. https://doi.org/10.1063/1.1332797
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