Two schemes of nucleation and growth of gallium nitride on Si(111) substrates are investigated and the structural and electrical properties of the resulting films are reported. Gallium nitride films grown using a 10–500 nm-thick AlN buffer layer deposited at high temperature (∼1050 °C) are found to be under 260–530 MPa of tensile stress and exhibit cracking, the origin of which is discussed. The threading dislocation density in these films increases with increasing AlN thickness, covering a range of 1.1 to Films grown using a thick, AlN-to-GaN graded buffer layer are found to be under compressive stress and are completely crack free. Heterojunction field effect transistors fabricated on such films result in well-defined saturation and pinch-off behavior with a saturated current of ∼525 mA/mm and a transconductance of ∼100 mS/mm in dc operation.
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15 June 2001
Research Article|
June 15 2001
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
H. Marchand;
H. Marchand
Department of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, California 93106
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L. Zhao;
L. Zhao
Department of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, California 93106
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N. Zhang;
N. Zhang
Department of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, California 93106
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B. Moran;
B. Moran
Department of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, California 93106
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R. Coffie;
R. Coffie
Department of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, California 93106
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U. K. Mishra;
U. K. Mishra
Department of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, California 93106
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J. S. Speck;
J. S. Speck
Department of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, California 93106
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S. P. DenBaars;
S. P. DenBaars
Department of Electrical and Computer Engineering and Materials, University of California, Santa Barbara, California 93106
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J. A. Freitas
J. A. Freitas
ESTD-Electronic Materials Branch, Naval Research Laboratory, Code 6872, 4555 Overlook Avenue S.W., Washington DC 20375-5347
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J. Appl. Phys. 89, 7846–7851 (2001)
Article history
Received:
December 13 2000
Accepted:
March 21 2001
Citation
H. Marchand, L. Zhao, N. Zhang, B. Moran, R. Coffie, U. K. Mishra, J. S. Speck, S. P. DenBaars, J. A. Freitas; Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors. J. Appl. Phys. 15 June 2001; 89 (12): 7846–7851. https://doi.org/10.1063/1.1372160
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