Two schemes of nucleation and growth of gallium nitride on Si(111) substrates are investigated and the structural and electrical properties of the resulting films are reported. Gallium nitride films grown using a 10–500 nm-thick AlN buffer layer deposited at high temperature (∼1050 °C) are found to be under 260–530 MPa of tensile stress and exhibit cracking, the origin of which is discussed. The threading dislocation density in these films increases with increasing AlN thickness, covering a range of 1.1 to >5.8×109cm−2. Films grown using a thick, AlN-to-GaN graded buffer layer are found to be under compressive stress and are completely crack free. Heterojunction field effect transistors fabricated on such films result in well-defined saturation and pinch-off behavior with a saturated current of ∼525 mA/mm and a transconductance of ∼100 mS/mm in dc operation.

1.
See, for example, Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, International Electron Device Meeting Technical Digest, Washington, DC, 5–8 December 1999, pp. 925–927.
2.
M.
Hansen
,
P.
Fini
,
L.
Zhao
,
A. C.
Abare
,
L. A.
Coldren
,
J. S.
Speck
, and
S. P.
DenBaars
,
Appl. Phys. Lett.
76
,
529
(
2000
), and references therein.
3.
H.
Amano
,
N.
Sawaki
,
I.
Akasaki
, and
Y.
Toyoda
,
Appl. Phys. Lett.
48
,
353
(
1986
);
X. H.
Wu
,
P.
Fini
,
E. J.
Tarsa
,
B.
Heying
,
S.
Keller
,
U. K.
Mishra
,
S. P.
DenBaars
, and
J. S.
Speck
,
J. Cryst. Growth
189/190
,
231
(
1998
).
4.
See, for example,
F. A.
Ponce
,
B. S.
Krusor
,
J. S.
Major
,Jr.
,
W. E.
Plano
, and
D. F.
Welch
,
Appl. Phys. Lett.
67
,
410
(
1995
);
T. W.
Weeks
,Jr.
,
M.
Bremser
,
K.
Ailey
,
E.
Carlson
,
E.
Perry
,
E.
Piner
,
N.
El Masry
, and
R. F.
Davis
,
J. Mater. Res.
11
,
1011
(
1996
);
S.
Tanaka
,
S.
Iwai
, and
Y.
Aoyagi
,
J. Cryst. Growth
170
,
329
(
1997
);
N. V.
Edwards
,
M. D.
Bremser
,
R. F.
Davis
,
A. D.
Batchelor
,
S. D.
Yoo
,
C. F.
Karan
, and
D. E.
Aspnes
,
Appl. Phys. Lett.
73
,
2808
(
1998
);
H.
Lahrèche
,
M.
Leroux
,
M.
Laügt
,
M.
Vaille
,
B.
Beaumont
, and
P.
Gibart
,
J. Appl. Phys.
87
,
577
(
2000
), and references therein;
B. Moran, M. Hansen, M. D. Craven, J. S. Speck, and S. P. DenBaars, J. Cryst Growth (accepted).
5.
See Ref. 11 for comparative data on Al2O3, 6H-SiC, and Si(111) substrates for GaN epitaxy.
6.
H.
Marchand
et al.,
MRS Internet J. Nitride Semicond. Res.
4
,
2
(
1999
).
7.
D. M.
Follstaedt
,
J.
Han
,
P.
Provencio
, and
J. G.
Fleming
,
MRS Internet J. Nitride Semicond. Res.
4S1
,
G3
.
72
(
1999
).
8.
A.
Strittmatter
,
A.
Krost
,
M.
Straßburg
,
V.
Türck
,
D.
Bimberg
,
J.
Bläsing
, and
J.
Christen
,
Appl. Phys. Lett.
74
,
1242
(
1999
).
9.
A. T.
Schremer
,
J. A.
Smart
,
Y.
Wang
,
O.
Ambacher
,
N. C.
MacDonald
, and
J. R.
Schealy
,
Appl. Phys. Lett.
76
,
736
(
2000
).
10.
S.
Kaiser
,
M.
Jakob
,
J.
Zweck
,
W.
Gebhardt
,
O.
Ambacher
,
R.
Dimitrov
,
A. T.
Schremer
,
J. A.
Smart
, and
J. R.
Shealy
,
J. Vac. Sci. Technol. B
18
,
733
(
2000
).
11.
H.
Lahrèche
,
P.
Vennéguès
,
O.
Tottereau
,
M.
Laügt
,
P.
Lorenzini
,
M.
Leroux
,
B.
Beaumont
, and
P.
Gibart
,
J. Cryst. Growth
217
,
13
(
2000
).
12.
S. I.
Molina
,
A. M.
Sánchez
,
F. J.
Pacheco
,
R.
Garcia
,
M. A.
Sánchez-Garcia
,
F. J.
Sánchez
, and
E.
Calleja
,
Appl. Phys. Lett.
74
,
3362
(
1999
).
13.
S. A.
Nikishin
,
N. N.
Faleev
,
V. G.
Antipov
,
S.
Francoeur
,
L.
Grave de Peralta
,
G. A.
Seryogin
,
H.
Temkin
,
T. I.
Prokofyeva
,
M.
Holtz
, and
S. N. G.
Chu
,
Appl. Phys. Lett.
75
,
2073
(
1999
).
14.
H.
Ishikawa
,
G. Y.
Zhao
,
N.
Nakada
,
T.
Egawa
,
T.
Jimbo
, and
M.
Umeno
,
Jpn. J. Appl. Phys., Part 2
38
,
L492
(
1999
).
15.
H. M.
Liaw
,
R.
Venugopal
,
J.
Wan
,
R.
Doyle
,
P. L.
Fejes
, and
M. R.
Melloch
,
Solid-State Electron.
44
,
685
(
2000
).
16.
S.
Tanaka
,
Y.
Kawaguchi
,
N.
Sawaki
,
M.
Hibino
, and
K.
Hiramatsu
,
Appl. Phys. Lett.
76
,
2701
(
2000
).
17.
W.
Yang
,
S. A.
McPherson
,
Z.
Mao
,
S.
McKernan
, and
C. B.
Carter
,
J. Cryst. Growth
204
,
270
(
1999
).
18.
S.
Guha
and
N. A.
Bojarczuk
,
Appl. Phys. Lett.
72
,
415
(
1998
);
S.
Guha
and
N. A.
Bojarczuk
,
Appl. Phys. Lett.
73
,
1487
(
1998
).
19.
C. A.
Tran
,
A.
Osinski
,
R. F.
Karlicek
, Jr.
, and
I.
Berishev
,
Appl. Phys. Lett.
75
,
1494
(
1999
).
20.
J. W.
Yang
,
A.
Lunev
,
G.
Simin
,
A.
Chitnis
,
M.
Shatalov
,
M. Asif
Khan
,
J. E.
Van Nostrand
, and
R.
Gaska
,
Appl. Phys. Lett.
76
,
273
(
2000
).
21.
S.
Dalmasso
,
E.
Feltin
,
P.
de Mierry
,
B.
Beaumont
,
P.
Gibart
, and
M.
Leroux
,
Electron. Lett.
36
,
1728
(
2000
).
22.
A.
Osinsky
,
S.
Gangopadhyay
,
J. W.
Yang
,
R.
Gaska
,
D.
Kuksenkov
,
H.
Temkin
,
I. K.
Shmagin
,
Y. C.
Chang
,
J. F.
Muth
, and
R. M.
Kolbas
,
Appl. Phys. Lett.
72
,
551
(
1998
).
23.
J. L.
Pau
,
E.
Monroy
,
F. B.
Naranjo
,
E.
Muñoz
,
F.
Calle
,
M. A.
Sánchez-Garcia
, and
E.
Calleja
,
Appl. Phys. Lett.
76
,
2785
(
2000
).
24.
E. M. Chumbes, A. T. Schremer, J. A. Smart, D. Hogue, J. Komiak, and J. R. Shealy, IEDM Digest, Washington, DC, December 1999, pp. 397–400.
25.
T.
Egawa
,
N.
Nakada
,
H.
Ishikawa
, and
M.
Umeno
,
Electron. Lett.
36
,
1816
(
2000
).
26.
A.
Watanabe
,
T.
Takeuchi
,
K.
Hirosawa
,
H.
Amano
,
K.
Hiramatsu
, and
I.
Akasaki
,
J. Cryst. Growth
128
,
391
(
1993
).
27.
S.
Hearne
,
E.
Chason
,
J.
Han
,
J. A.
Floro
,
J.
Figiel
,
J.
Hunter
,
H.
Amano
, and
I. S. T.
Tsong
,
Appl. Phys. Lett.
74
,
356
(
1999
).
28.
P.
Waltereit
,
O.
Brandt
,
A.
Trampert
,
M.
Ramsteiner
,
M.
Reiche
,
M.
Qi
, and
K. H.
Ploog
,
Appl. Phys. Lett.
74
,
3660
(
1999
).
29.
J.
Han
,
M. H.
Crawford
,
R. J.
Shul
,
S. J.
Hearne
,
E.
Chason
,
J. J.
Figiel
, and
M.
Banas
,
MRS Internet J. Nitride Semicond. Res.
4S1
,
G7
.
7
(
1999
).
See also
L. T.
Romano
,
C. G.
Van de Walle
,
J. W.
Ager
III
,
W.
Götz
, and
R. S.
Kern
,
J. Appl. Phys.
87
,
7745
(
2000
).
30.
Limited experiments were performed in which TMAl preflows corresponding to 2–5 monolayers of aluminum were used; no significant differences in surface morphology, x-ray linewidths, or cracking were observed.
31.
J. P.
Ibbetson
,
P. T.
Fini
,
K. D.
Ness
,
S. P.
DenBaars
,
J. S.
Speck
, and
U. K.
Mishra
,
Appl. Phys. Lett.
77
,
250
(
2000
), and references therein.
32.
B.
Heying
,
X. H.
Wu
,
S.
Keller
,
Y.
Li
,
D.
Kapolnek
,
B. P.
Keller
,
S. P.
DenBaars
, and
J. S.
Speck
,
Appl. Phys. Lett.
68
,
643
(
1996
).
33.
V.
Srikant
,
J. S.
Speck
, and
D. R.
Clarke
,
J. Appl. Phys.
82
,
4286
(
1997
).
34.
H.
Heinke
,
V.
Kirchner
,
S.
Einfeld
, and
D.
Hommel
,
Appl. Phys. Lett.
77
,
2145
(
2000
).
35.
B. E. Warren, X-ray Diffraction (Dover, New York, 1990).
36.
A.
Polian
,
M.
Grimsditch
, and
I.
Grzegory
,
J. Appl. Phys.
79
,
3343
(
1996
);
see
A. F.
Wright
,
J. Appl. Phys.
82
,
2833
(
1997
).
37.
Stress data obtained from optical measurements will be reported in a separate publication. For a discussion, see, for example, Ref. 28 and:
B. H.
Bairamov
,
O.
Gürdal
,
A.
Botchkarev
,
H.
Morkoç
,
G.
Irmer
, and
J.
Monecke
,
Phys. Rev. B
60
,
16741
(
1999
).
38.
The thicker AlN layers in samples B and E resulted in build-up of electrical charge during the SIMS experiment. Additional SIMS experiments with proper charge compensation are under way.
39.
See, for example,
X.
Zhang
,
D.
Walker
,
A.
Saxler
,
P.
Kung
,
J.
Xu
, and
M.
Razeghi
,
Electron. Lett.
32
,
1622
(
1996
);
E.
Calleja
et al.,
Phys. Rev. B
58
,
1550
(
1998
).
40.
Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, IMS-2000 Digest, Boston, MA, June 2000, pp. 963–965;
Y.-F. Wu, P. M. Chavarkart, M. Moore, P. Parikh, B. P. Keller and U. K. Mishra, IEDM, San Diego, CA, December 2000 (accepted).
41.
Reports on the growth of AlN on Si(111) include: Ref. 11;
E.
Rehder
,
M.
Zhou
,
L.
Zhang
,
N. R.
Perkins
,
S. E.
Babcock
, and
T. F.
Kuech
,
MRS Internet J. Nitride Semicond. Res.
4S1
,
G3
.
56
(
1999
);
V.
Lebedev
,
B.
Schröter
,
G.
Kipshidze
, and
W.
Richter
,
J. Cryst. Growth
207
,
266
(
1999
).
42.
S.
Keller
,
G.
Parish
,
P. T.
Fini
,
S.
Heikman
,
C.-H.
Chen
,
N.
Zhang
,
S. P.
DenBaars
, and
U. K.
Mishra
,
J. Appl. Phys.
86
,
5850
(
1999
).
43.
D.
Jena
,
A. C.
Gossard
, and
U. K.
Mishra
,
Appl. Phys. Lett.
76
,
1707
(
2000
).
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