Polycrystalline silicon produced by Ni–silicide mediated crystallization of amorphous silicon in an electric field Available to Purchase

Crystallization of amorphous silicon $(a-Si)$ by Ni–silicide mediated crystallization (SMC) has been studied in an electric field with Ni area density between $3.3×1013$ and $5.7×1014 atoms/cm2$ on the $a-Si.$ The needlelike crystallites of ∼1000 Å in width and several micron length grow in the 〈111〉 directions with the 〈011〉 normal to the film surface when Ni area density was between $5.1×1013$ and $2.9×1014 atoms/cm2.$ However, dendritic crystallites have been found in the $a-Si$ matrix without complete crystallization of the $a-Si$ when the Ni area density was $3.3×1013 atoms/cm2.$ The field-effect mobility of the thin-film transistor using the SMC poly-Si was 60–112 cm²/V s when the average Ni bulk density in the poly-Si was around $3.0×1018 atoms/cm3,$ and it decreases with increasing Ni density.