An experimental investigation of impact ionization by electroluminescence in composite channel lattice-matched InAlAs/InGaAs/InP/InAlAs high electron mobility transistors (HEMTs) is presented. In these transistors, an InP subchannel layer is added to the InGaAs channel. Radiative recombinations at two different energies are observed, characteristic of recombinations in the InGaAs channel and at the InP/AlInAs interface. The bias-dependent electroluminescence line intensities are used to analyze the role played by the InP layer for relaxing the hot carriers. A large fraction of electrons in the InGaAs channel of the composite HEMT is transferred to the InP subchannel in the high field gate-drain region.

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